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Global Ferroelectric RAM Market Report, History and Forecast 2014-2025, Breakdown Data by Manufacturers, Key Regions, Types and Application

In this report, the Global Ferroelectric RAM market is valued at USD XX million in 2017 and is expected to reach USD XX million by the end of 2025, growing at a CAGR of XX% between 2017 and 2025. Global Ferroelectric RAM market has been broken down by major regions, with complete market estimates on the basis of products/applications on a regional basis.

Browse full research report at https://www.crystalmarketreport.com/global-ferroelectric-ram-market-report-history-and-forecast-2014-2025-breakdown-data-by-manufacturers-key-regions-types-and-application

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Summary

Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.

FeRAM consists of a grid of small capacitors and associated wiring and signling transistors. Each storage element, a cell, consists of one capacitor and one transistor. Unlike the DRAM use a linear dielectric in its cell capacitor, dielectric structure in the FeRAM cell capacitor usually contains ferroelectric material, typically lead zirconate titanate (PZT).

A ferroelectric material has a nonlinear relationship between the applied electric field and the apparent stored charge. The ferroelectric characteristic has the form of a hysteresis loop, which is very similar in shape to the hysteresis loop of ferromagnetic materials. The dielectric constant of a ferroelectric is typically much higher than that of a linear dielectric because of the effects of semi-permanent electric dipoles formed in the crystal structure of the ferroelectric material. When an external electric field is applied across a dielectric, the dipoles tend to align themselves with the field direction, produced by small shifts in the positions of atoms and shifts in the distributions of electronic charge in the crystal structure. After the charge is removed, the dipoles retain their polarization state. Binary “0”s and “1”s are stored as one of two possible electric polarizations in each data storage cell. For example, in the figure a “1” is encoded using the negative remnant polarization “-Pr”, and a “0” is encoded using the positive remnant polarization “+Pr”.In terms of operation, FeRAM is similar to DRAM. Writing is accomplished by applying a field across the ferroelectric layer by charging the plates on either side of it, forcing the atoms inside into the “up” or “down” orientation (depending on the polarity of the charge), thereby storing a “1” or “0”. Reading, however, is somewhat different than in DRAM. The transistor forces the cell into a particular state, say “0”. If the cell already held a “0”, nothing will happen in the output lines. If the cell held a “1”, the re-orientation of the atoms in the film will cause a brief pulse of current in the output as they push electrons out of the metal on the “down” side. The presence of this pulse means the cell held a “1”. Since this process overwrites the cell, reading FeRAM is a destructive process, and requires the cell to be re-written if it was changed.

Ferroelectric RAM was proposed by MIT graduate student Dudley Allen Buck in his master’s thesis, Ferroelectrics for Digital Information Storage and Switching, published in 1952. Development of FeRAM began in the late 1980s. Work was done in 1991 at NASA’s Jet Propulsion Laboratory on improving methods of read out, including a novel method of non-destructive readout using pulses of UV radiation. Much of the current FeRAM technology was developed by Ramtron, a fabless semiconductor company. One major licensee is Fujitsu, who operates what is probably the largest semiconductor foundry production line with FeRAM capability. Since 1999 they have been using this line to produce standalone FeRAMs, as well as specialized chips (e.g. chips for smart cards) with embedded FeRAMs. Fujitsu produced devices for Ramtron until 2010. Since 2010 Ramtron’s fabricators have been TI (Texas Instruments) and IBM. Since at least 2001 Texas Instruments has collaborated with Ramtron to develop FeRAM test chips in a modified 130 nm process. In the fall of 2005, Ramtron reported that they were evaluating prototype samples of an 8-megabit FeRAM manufactured using Texas Instruments’ FeRAM process. Fujitsu and Seiko-Epson were in 2005 collaborating in the development of a 180 nm FeRAM process. In 2012 Ramtron was acquired by Cypress Semiconductor. FeRAM research projects have also been reported at Samsung, Matsushita, Oki, Toshiba, Infineon, Hynix, Symetrix, Cambridge University, University of Toronto, and the Interuniversity Microelectronics Centre (IMEC, Belgium).

The global Ferroelectric RAM market was 240 million US$ in 2018 and is expected to 300 million US$ by the end of 2025, growing at a CAGR of 3.0% between 2019 and 2025.

This report studies the Ferroelectric RAM market size (value and volume) by players, regions, product types and end industries, history data 2014-2018 and forecast data 2019-2025; This report also studies the global market competition landscape, market drivers and trends, opportunities and challenges, risks and entry barriers, sales channels, distributors and Porter’s Five Forces Analysis.

Geographically, this report is segmented into several key regions, with sales, revenue, market share and growth Rate of Ferroelectric RAM in these regions, from 2014 to 2025, covering

North America (United States, Canada and Mexico)

Europe (Germany, UK, France, Italy, Russia and Turkey etc.)

Asia-Pacific (China, Japan, Korea, India, Australia, Indonesia, Thailand, Philippines, Malaysia and Vietnam)

South America (Brazil etc.)

Middle East and Africa (Egypt and GCC Countries)

The various contributors involved in the value chain of the product include manufacturers, suppliers, distributors, intermediaries, and customers. The key manufacturers in this market include

Cypress Semiconductor

Fujitsu

Texas Instruments

IBM

Infineon

By the product type, the market is primarily split into

Serial Memory

Parallel Memory

Others

By the end users/application, this report covers the following segments

Smart Meters

Automotive Electronics

Medical Devices

Wearable Devices

We can also provide the customized separate regional or country-level reports, for the following regions:

North America

United States

Canada

Mexico

Asia-Pacific

China

India

Japan

South Korea

Australia

Indonesia

Singapore

Malaysia

Philippines

Thailand

Vietnam

Rest of Asia-Pacific

Europe

Germany

France

UK

Italy

Spain

Russia

Rest of Europe

Central & South America

Brazil

Rest of Central & South America

Middle East & Africa

GCC Countries

Turkey

Egypt

South Africa

Rest of Middle East & Africa

The study objectives of this report are:

To study and analyze the global Ferroelectric RAM market size (value & volume) by company, key regions/countries, products and application, history data from 2014 to 2018, and forecast to 2025.

To understand the structure of Ferroelectric RAM market by identifying its various subsegments.

To share detailed information about the key factors influencing the growth of the market (growth potential, opportunities, drivers, industry-specific challenges and risks).

Focuses on the key global Ferroelectric RAM manufacturers, to define, describe and analyze the sales volume, value, market share, market competition landscape, SWOT analysis and development plans in next few years.

To analyze the Ferroelectric RAM with respect to individual growth trends, future prospects, and their contribution to the total market.

To project the value and volume of Ferroelectric RAM submarkets, with respect to key regions (along with their respective key countries).

To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market.

To strategically profile the key players and comprehensively analyze their growth strategies.

In this study, the years considered to estimate the market size of Ferroelectric RAM are as follows:

History Year: 2014-2018

Base Year: 2018

Estimated Year: 2019

Forecast Year 2019 to 2025

This report includes the estimation of market size for value (million USD) and volume (M Units). Both top-down and bottom-up approaches have been used to estimate and validate the market size of Ferroelectric RAM market, to estimate the size of various other dependent submarkets in the overall market. Key players in the market have been identified through secondary research, and their market shares have been determined through primary and secondary research. All percentage shares, splits, and breakdowns have been determined using secondary sources and verified primary sources.

For the data information by region, company, type and application, 2018 is considered as the base year. Whenever data information was unavailable for the base year, the prior year has been considered.

Key Stakeholders

Raw material suppliers

Distributors/traders/wholesalers/suppliers

Regulatory bodies, including government agencies and NGO

Commercial research & development (R&D) institutions

Importers and exporters

Government organizations, research organizations, and consulting firms

Trade associations and industry bodies

End-use industries

Available Customizations

With the given market data, QYResearch offers customizations according to the company’s specific needs. The following customization options are available for the report:

Further breakdown of Ferroelectric RAM market on basis of the key contributing countries.

Detailed analysis and profiling of additional market players.

Browse full research report at https://www.crystalmarketreport.com/global-ferroelectric-ram-market-report-history-and-forecast-2014-2025-breakdown-data-by-manufacturers-key-regions-types-and-application

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